BC548 NPN Transistor
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- Transistor BC548
- Transistor Type: NPN
- Package/Case: DIP-3
- Made in China
BC548 NPN Transistor
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- Size Guide
Size Guide
Size Chest Waist Hips XS 34 28 34 S 36 30 36 M 38 32 38 L 40 34 40 XL 42 36 42 2XL 44 38 44 All measurements are in INCHES
and may vary a half inch in either direction.
Size Chest Waist Hips 2XS 32 26 32 XS 34 28 34 S 36 30 36 M 38 32 38 L 40 34 40 XL 42 36 42 All measurements are in INCHES
and may vary a half inch in either direction.
Size Chest Waist Hips XS 34 28 34 S 36 30 36 M 38 32 38 L 40 34 40 XL 42 36 42 2XL 44 38 44 All measurements are in INCHES
and may vary a half inch in either direction.
- Delivery & Return
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BC548 NPN Transistor
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Description
BC548 NPN Transistor is a general-purpose NPN bipolar junction transistor commonly used in European and American electronic equipment. It is notably often the first type of bipolar transistor hobbyists encounter and is often featured in designs in hobby electronics magazines where a general-purpose transistor is required.
BC548 Transistor Features:
- Bi-Polar NPN Transistor
- DC Current Gain (hFE) is 800 maximum
- Continuous Collector current (IC) is 500mA
- Emitter Base Voltage (VBE) is 5V
- Base Current(IB) is 5mA maximum
- Available in To-92 Package
- Made in China
Brief Description of BC548 NPN Transistor:
BC548 is an NPN transistor so the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to the base pin. BC548 has a gain value of 110 to 800, this value determines the amplification capacity of the transistor. The maximum amount of current that could flow through the Collector pin is 500mA, hence we cannot connect loads that consume more than 500mA using this transistor. To bias a transistor we have to supply current to the base pin, this current (IB) should be limited to 5mA.
When this transistor is fully biased, it can allow a maximum of 500mA to flow across the collector and emitter. This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (VCE) or Base-Emitter (VBE) could be 200 and 900 mV respectively. When the base current is removed the transistor becomes fully off, this stage is called the Cut-off Region and the Base Emitter voltage could be around 660 mV.
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